GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …

We report on our recent progress in improving the performance of nonpolar III-nitride vertical-
cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and …

We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity
surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing …

Photoelectrochemical (PEC) band gap selective undercut etching is discussed as an
alternative technique to chemical-mechanical polishing and laser-lift off for substrate …

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a
photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to …

We investigated the properties of a GaN epilayer grown by metalorganic vapour phase
epitaxy on a c-plane bulk GaN substrate obtained by ammonothermal growth. X-ray …

Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al 0.5 Ga 0.5
N/GaN multiple-quantum wells is observed at room temperature. 10 period Al 0.5 Ga 0.5 …

We carried out a series of simulations analyzing the dependence of mirror reflectance,
threshold current density, and differential efficiency on the scattering loss caused by the …