Spintronics: Fundamentals and applications

I Žutić, J Fabian, SD Sarma - Reviews of modern physics, 2004 - APS
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …

Exchange bias in nanostructures

J Nogués, J Sort, V Langlais, V Skumryev, S Suriñach… - Physics reports, 2005 - Elsevier
The phenomenology of exchange bias and related effects in nanostructures is reviewed.
The types of systems discussed include: lithographically fabricated ferromagnetic (FM) …

Overview of emerging nonvolatile memory technologies

JS Meena, SM Sze, U Chand, TY Tseng - Nanoscale research letters, 2014 - Springer
Nonvolatile memory technologies in Si-based electronics date back to the 1990s.
Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing …

Finite-size effects in fine particles: magnetic and transport properties

X Batlle, A Labarta - Journal of Physics D: Applied Physics, 2002 - iopscience.iop.org
Some of the most relevant finite-size and surface effects in the magnetic and transport
properties of magnetic fine particles and granular solids are reviewed. The stability of the …

Practical approaches to green solvents

JM DeSimone - Science, 2002 - science.org
Solvents are widely used in commercial manufacturing and service industries. Despite
abundant precaution, they inevitably contaminate our air, land, and water because they are …

Spin-dependent tunnelling in magnetic tunnel junctions

EY Tsymbal, ON Mryasov… - Journal of Physics …, 2003 - iopscience.iop.org
The phenomenon of electron tunnelling has been known since the advent of quantum
mechanics, but continues to enrich our understanding of many fields of physics, as well as …

Spin-based logic in semiconductors for reconfigurable large-scale circuits

H Dery, P Dalal, Ł Cywiński, LJ Sham - Nature, 2007 - nature.com
Research in semiconductor spintronics aims to extend the scope of conventional electronics
by using the spin degree of freedom of an electron in addition to its charge. Significant …

Magnetoresistive random access memory using magnetic tunnel junctions

S Tehrani, JM Slaughter, M Deherrera… - Proceedings of the …, 2003 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) technology combines a spintronic device
with standard silicon-based microelectronics to obtain a combination of attributes not found …

[图书][B] Ultrathin magnetic structures II: Measurement techniques and novel magnetic properties

B Heinrich, JAC Bland - 2005 - books.google.com
The ability to understand and control the unique properties of interfaces has created an
entirely new field of magnetism, with profound impact in technology and serving as the basis …

Scalable parallel micromagnetic solvers for magnetic nanostructures

W Scholz, J Fidler, T Schrefl, D Suess, H Forster… - Computational Materials …, 2003 - Elsevier
A parallel finite element micromagnetics package has been implemented, that is highly
scalable, easily portable and combines different solvers for the micromagnetic equations …