Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …

More than two decades of III-N materials research has led to the production of visible
spectrum commercial light-emitting diodes (LEDs) and laser diodes (LDs). Commercial c …

Pseudomorphic and partially relaxed layers of corundum phase (Al, Ga) 2 O 3 epilayers on
(01.2)-oriented Al 2 O 3 fabricated by pulsed laser deposition (PLD) are investigated. An …

Long wavelength (525–575 nm)(⁠ 11 2 2⁠) light emitting diodes were grown
pseudomorphically on stress relaxed InGaN buffer layers. Basal plane dislocation glide led …

Cathodoluminescence imaging was used to study the onset of plastic relaxation and critical
thickness for misfit dislocation (MD) formation by basal plane (BP) or nonbasal plane (NBP) …

We have studied primary and secondary slip systems in the relaxation of lattice mismatch
stresses in (20 2 1) and (30 3 1) semipolar In x Ga 1− x N/GaN heterostructures by analyzing …

State-of-the art light-emitting diodes (LEDs) for solid-state lighting (SSL) are reviewed with
the focus on their efficiency and ways for its improvement. Mechanisms of the LED efficiency …

We report on the core-shell InGaAs/GaAs nanopillars grown by metal organic chemical
vapor deposition on silicon substrates. The core diameter typically amounts to 600 nm, the …

Semipolar (11 2¯ 2) InGaN/GaN superlattice templates with different periodical InGaN layer
thicknesses were grown on m-plane sapphire substrates using metal-organic chemical …