The germanium quantum information route
In the effort to develop disruptive quantum technologies, germanium is emerging as a
versatile material to realize devices capable of encoding, processing and transmitting …
versatile material to realize devices capable of encoding, processing and transmitting …
Monolithically integrated Ge-on-Si active photonics
J Liu - Photonics, 2014 - mdpi.com
Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …
large-scale electronic-photonic integration for future generations of high-performance, low …
Gate-controlled quantum dots and superconductivity in planar germanium
Superconductors and semiconductors are crucial platforms in the field of quantum
computing. They can be combined to hybrids, bringing together physical properties that …
computing. They can be combined to hybrids, bringing together physical properties that …
Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
Buried‐channel semiconductor heterostructures are an archetype material platform for the
fabrication of gated semiconductor quantum devices. Sharp confinement potential is …
fabrication of gated semiconductor quantum devices. Sharp confinement potential is …
Electronic and optical properties of two-dimensional heterostructures based on Janus XSSe (X= Mo, W) and Mg (OH) 2: A first principles investigation
J Lou, K Ren, Z Huang, W Huo, Z Zhu, J Yu - RSC advances, 2021 - pubs.rsc.org
Two-dimensional (2D) materials have attracted numerous investigations after the discovery
of graphene. 2D van der Waals (vdW) heterostructures are a new generation of layered …
of graphene. 2D van der Waals (vdW) heterostructures are a new generation of layered …
Optical spin injection and spin lifetime in Ge heterostructures
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
Strain relaxation in high Ge content SiGe layers deposited on Si
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …
Quantum transport quality of a processed undoped Ge/SiGe heterostructure
YX Li, Z Kong, S Hou, G Wang, S Huang - Physical Review B, 2023 - APS
A degraded mobility of 5.2× 10 5 cm 2 V− 1 s− 1 but a long quantum scattering time of 2.3 ps
at the hole density of 2.25× 10 11 cm− 2 were obtained from a two-dimensional hole gas in a …
at the hole density of 2.25× 10 11 cm− 2 were obtained from a two-dimensional hole gas in a …
Dangling bonds as possible contributors to charge noise in silicon and silicon–germanium quantum dot qubits
Spin qubits based on Si and Si1–x Ge x quantum dot architectures exhibit among the best
coherence times of competing quantum computing technologies, yet they still suffer from …
coherence times of competing quantum computing technologies, yet they still suffer from …
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast
carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced …
carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced …