An electronic silicon-based memristor with a high switching uniformity
Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale
conductivity and are of interest in the development of non-volatile random access memory …
conductivity and are of interest in the development of non-volatile random access memory …
Purely electronic nanometallic resistance switching random-access memory
Resistance switching random-access memory (ReRAM), with the ability to repeatedly
modulate electrical resistance, has been highlighted as a feasible high-density memory with …
modulate electrical resistance, has been highlighted as a feasible high-density memory with …
[图书][B] Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory
Y Lu - 2017 - search.proquest.com
This thesis describes conductivity in amorphous semiconductors and insulators—some
doped with metals, in which elastic electrons can random walk across a transport length of …
doped with metals, in which elastic electrons can random walk across a transport length of …
A Si-memristor electronically and uniformly switched by a constant voltage
Amorphous insulators have localized wave functions that decay with the distance $ r $
following exp ($-r/\zeta $). Since nanoscale conduction is not excluded at $ r<\zeta $, one …
following exp ($-r/\zeta $). Since nanoscale conduction is not excluded at $ r<\zeta $, one …