An electronic silicon-based memristor with a high switching uniformity

Y Lu, A Alvarez, CH Kao, JS Bow, SY Chen… - Nature Electronics, 2019 - nature.com
Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale
conductivity and are of interest in the development of non-volatile random access memory …

Purely electronic nanometallic resistance switching random-access memory

Y Lu, JH Yoon, Y Dong, IW Chen - MRS Bulletin, 2018 - cambridge.org
Resistance switching random-access memory (ReRAM), with the ability to repeatedly
modulate electrical resistance, has been highlighted as a feasible high-density memory with …

[图书][B] Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory

Y Lu - 2017 - search.proquest.com
This thesis describes conductivity in amorphous semiconductors and insulators—some
doped with metals, in which elastic electrons can random walk across a transport length of …

A Si-memristor electronically and uniformly switched by a constant voltage

Y Lu, IW Chen - arXiv preprint arXiv:1806.04300, 2018 - arxiv.org
Amorphous insulators have localized wave functions that decay with the distance $ r $
following exp ($-r/\zeta $). Since nanoscale conduction is not excluded at $ r<\zeta $, one …