The latitudinal distributions of phytoplankton biomass, composition and production in the
Atlantic Ocean were determined along a 10,000-km transect from 50° N to 50° S in October …

Resonant interband tunneling diodes on silicon substrates are demonstrated using a Si/Si
0.5 Ge 0.5/Si heterostructure grown by low temperature molecular beam epitaxy which …

Inclusion of Si atoms to the growth surface during the molecular beam epitaxy of Ge and Sn
to form a SiGeSn alloy was identified as a reactive surface species and as a means to …

Metastable Ge1− y C y alloys were grown by molecular beam epitaxy as homogeneous
solid solutions having a diamond lattice structure. The substrates were (100) oriented Si …

Metastable Si1− x− yGexCy alloys were grown by molecular beam epitaxy on (100) Si
substrates. Solid elemental sources were used for the Si and Ge beams, and a resistively …

Sb surface segregation and doping during Si (100) molecular beam epitaxy were studied for
growth temperatures of 320–500° C. Surface segregation was analyzed by depth profiling …

Organosilane precursor molecules, here aminoethylaminomethylphenethyltrimethox…, or
PEDA, are chemisorbed onto a Si surface forming a monolayer thick film. These films are …

Large-area Si/Si/sub 1-x/Ge/sub x/heterojunction bipolar transistors (HBTs) have been
demonstrated with record output power at S-Band. Under pulsed conditions in class C …

Ge segregation during the growth of Si1− xGex alloys (x= 5, 10, 20, and 40%) was studied
using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 …

This study presents the room-temperature operation of/spl delta/-doped Si resonant
interband tunneling diodes which were fabricated by low-temperature molecular beam …