Electrical modeling and characterization of shield differential through-silicon vias

Q Lu, Z Zhu, Y Yang, R Ding - IEEE Transactions on Electron …, 2015 - ieeexplore.ieee.org
An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D
integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using …

Modeling of the RF coaxial TSV configuration inside the silicon interposer with embedded cooling cavity

W Li, Z Liu, W Qian, Z Wang, W Wang… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
In this article, a low-loss RF coaxial through-silicon vias (TSVs)(C-TSVs) configuration in the
silicon interposer with the embedded cooling cavity is proposed. For the single C-TSV array …

Electrothermal cosimulation of 3-D carbon-based heterogeneous interconnects

N Li, J Mao, WS Zhao, M Tang… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
Electrothermal characteristics of some novel 3-D carbon-based heterogeneous
interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer …

High-frequency analysis of Cu-carbon nanotube composite through-silicon vias

WS Zhao, J Zheng, Y Hu, S Sun… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A high-frequency analysis of Cu-carbon nanotube (CNT) composite through-silicon vias
(TSVs) is conducted. The electrical modeling of the Cu-CNT composite TSVs is performed …

Electrical modeling and analysis of Cu-CNT heterogeneous coaxial through-silicon vias

Q Lu, Z Zhu, Y Yang, R Ding, Y Li - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
An equivalent-circuit model of Cu-carbon nanotube heterogeneous coaxial through-silicon
vias (HCTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. Based on the …

Electrothermal characterization of multilevel Cu-graphene heterogeneous interconnects in the presence of an electrostatic discharge (ESD)

R Zhang, WS Zhao, J Hu, WY Yin - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Temperature responses of multilevel Cu-graphene heterogeneous interconnects under the
impact of an electrostatic discharge are investigated by using our self-developed time …

Electromagnetic characteristics of multiport TSVs using L-2L de-embedding method and shielding TSVs

YS Li, Y Li, Q Min, K Wu, EX Liu, R Hao… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
This paper presents an L-2L de-embedding method for characterizing the electromagnetic
properties of through-silicon-vias (TSVs) in 3-D ICs. To the best of our knowledge, this is the …

Applying the high-k dielectric materials in vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect for improving transmission performance

P Xu, H Huang, F Zou, L Xie - Micro and Nanostructures, 2024 - Elsevier
In order to solve the electrical performance limitations of horizontal multilayer graphene
nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer …

Modeling and analysis of crosstalk induced effects in graphene-carbon nanotube composite interconnects

F Zou, Z Pan - Micro and Nanostructures, 2024 - Elsevier
This paper proposes an equivalent circuit model for two-line coupled multilayer graphene
nanoribbon-single-wall carbon nanotube (MLGNR-SWCNT) composite interconnects …

Beyond-Cu intermediate-length interconnect exploration for SRAM application

Z Pei, F Catthoor, Z Tokei, C Pan - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Promising interconnect materials continue to emerge and are considered as potential
replacements for Cu interconnects. In this paper, an intermediate-length interconnect …