Electrical modeling and characterization of shield differential through-silicon vias
An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D
integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using …
integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using …
Modeling of the RF coaxial TSV configuration inside the silicon interposer with embedded cooling cavity
W Li, Z Liu, W Qian, Z Wang, W Wang… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
In this article, a low-loss RF coaxial through-silicon vias (TSVs)(C-TSVs) configuration in the
silicon interposer with the embedded cooling cavity is proposed. For the single C-TSV array …
silicon interposer with the embedded cooling cavity is proposed. For the single C-TSV array …
Electrothermal cosimulation of 3-D carbon-based heterogeneous interconnects
N Li, J Mao, WS Zhao, M Tang… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
Electrothermal characteristics of some novel 3-D carbon-based heterogeneous
interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer …
interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer …
High-frequency analysis of Cu-carbon nanotube composite through-silicon vias
WS Zhao, J Zheng, Y Hu, S Sun… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A high-frequency analysis of Cu-carbon nanotube (CNT) composite through-silicon vias
(TSVs) is conducted. The electrical modeling of the Cu-CNT composite TSVs is performed …
(TSVs) is conducted. The electrical modeling of the Cu-CNT composite TSVs is performed …
Electrical modeling and analysis of Cu-CNT heterogeneous coaxial through-silicon vias
An equivalent-circuit model of Cu-carbon nanotube heterogeneous coaxial through-silicon
vias (HCTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. Based on the …
vias (HCTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. Based on the …
Electrothermal characterization of multilevel Cu-graphene heterogeneous interconnects in the presence of an electrostatic discharge (ESD)
Temperature responses of multilevel Cu-graphene heterogeneous interconnects under the
impact of an electrostatic discharge are investigated by using our self-developed time …
impact of an electrostatic discharge are investigated by using our self-developed time …
Electromagnetic characteristics of multiport TSVs using L-2L de-embedding method and shielding TSVs
This paper presents an L-2L de-embedding method for characterizing the electromagnetic
properties of through-silicon-vias (TSVs) in 3-D ICs. To the best of our knowledge, this is the …
properties of through-silicon-vias (TSVs) in 3-D ICs. To the best of our knowledge, this is the …
Applying the high-k dielectric materials in vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect for improving transmission performance
P Xu, H Huang, F Zou, L Xie - Micro and Nanostructures, 2024 - Elsevier
In order to solve the electrical performance limitations of horizontal multilayer graphene
nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer …
nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer …
Modeling and analysis of crosstalk induced effects in graphene-carbon nanotube composite interconnects
F Zou, Z Pan - Micro and Nanostructures, 2024 - Elsevier
This paper proposes an equivalent circuit model for two-line coupled multilayer graphene
nanoribbon-single-wall carbon nanotube (MLGNR-SWCNT) composite interconnects …
nanoribbon-single-wall carbon nanotube (MLGNR-SWCNT) composite interconnects …
Beyond-Cu intermediate-length interconnect exploration for SRAM application
Promising interconnect materials continue to emerge and are considered as potential
replacements for Cu interconnects. In this paper, an intermediate-length interconnect …
replacements for Cu interconnects. In this paper, an intermediate-length interconnect …