Miniaturized laser sources with low threshold power are required for integrated photonic
devices. Photostable core/shell nanocrystals are well suited as gain material and their laser …

This dissertation investigates III-V compound semiconductors and their alloys using
transmission electron microscopy (TEM), with applications to LEDs and solar cells, and other …

In this article the structural, optical and dielectric properties of a 200 nm thick Bi 2 O 3 thin
films which are deposited onto amorphous germanium substrate are reported. Both of the …

Abstract (DE) Photonische Metaoberflächen erhalten ihre einzigartigen optischen
Eigenschaften durch die periodische Anordnung von Bauelementen im Sub …

The exponentially increasing capacity demand due to the emerging applications of cloud
computing, 5G, and big data brings grand challenges for conventional single mode fibers …

We report values of parametric-model (PM) parameters that can be used to obtain dielectric
functions (refractive indices) from 1.5 to 6.0 eV for \rmIn_x\rmAl_1-x\rmP In_xAl_1− xP alloys …

Semiconductor devices and methods of fabricating semicon ductor devices having a dilute
nitride active layer and at least one semiconductor material overlying the dilute nitride active …

Germanium (Ge) laser on Ge-on-insulator (GOI) shows great promises as the light source in
photonic integrated circuits (PICs) for future data communication and sensing applications …

This research work is aimed to epitaxially integrate (Al) GaInP compounds on silicon (Si)
platform for visible-light (red, yellow, and green) LEDs. The integrated LED on Si not only …