Lasing by Template‐Assisted Self‐Assembled Quantum Dots
Miniaturized laser sources with low threshold power are required for integrated photonic
devices. Photostable core/shell nanocrystals are well suited as gain material and their laser …
devices. Photostable core/shell nanocrystals are well suited as gain material and their laser …
[图书][B] Dislocation density in GaAs thin films and quantitative determination of order-parameter in ordered-AlInP/GaInP alloys using transmission electron microscopy
XMJ Pasala - 2022 - search.proquest.com
This dissertation investigates III-V compound semiconductors and their alloys using
transmission electron microscopy (TEM), with applications to LEDs and solar cells, and other …
transmission electron microscopy (TEM), with applications to LEDs and solar cells, and other …
Effects of Ge substrate on the structural and optical conductivity parameters of Bi2O3 thin films
SR Alharbi, AF Qasrawi - Optik, 2019 - Elsevier
In this article the structural, optical and dielectric properties of a 200 nm thick Bi 2 O 3 thin
films which are deposited onto amorphous germanium substrate are reported. Both of the …
films which are deposited onto amorphous germanium substrate are reported. Both of the …
Anisotropic and non-linear optical properties of self-assembled colloidal metasurfaces
O Aftenieva - 2022 - tud.qucosa.de
Abstract (DE) Photonische Metaoberflächen erhalten ihre einzigartigen optischen
Eigenschaften durch die periodische Anordnung von Bauelementen im Sub …
Eigenschaften durch die periodische Anordnung von Bauelementen im Sub …
High-efficiency germanium-tin photodetectors for two micrometer applications
H Zhou - 2021 - dr.ntu.edu.sg
The exponentially increasing capacity demand due to the emerging applications of cloud
computing, 5G, and big data brings grand challenges for conventional single mode fibers …
computing, 5G, and big data brings grand challenges for conventional single mode fibers …
Parameterized optical properties of In x Al1-xP alloys
We report values of parametric-model (PM) parameters that can be used to obtain dielectric
functions (refractive indices) from 1.5 to 6.0 eV for \rmIn_x\rmAl_1-x\rmP In_xAl_1− xP alloys …
functions (refractive indices) from 1.5 to 6.0 eV for \rmIn_x\rmAl_1-x\rmP In_xAl_1− xP alloys …
Hydrogen diffusion barrier for hybrid semiconductor growth
A Maros, F Suarez, J Thorp, M Sheldon… - US Patent 10,991,835, 2021 - Google Patents
Semiconductor devices and methods of fabricating semicon ductor devices having a dilute
nitride active layer and at least one semiconductor material overlying the dilute nitride active …
nitride active layer and at least one semiconductor material overlying the dilute nitride active …
Germanium-on-insulator for group IV laser and III-V integration on silicon
S Bao - 2018 - dr.ntu.edu.sg
Germanium (Ge) laser on Ge-on-insulator (GOI) shows great promises as the light source in
photonic integrated circuits (PICs) for future data communication and sensing applications …
photonic integrated circuits (PICs) for future data communication and sensing applications …
Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission
C Wang - 2017 - dr.ntu.edu.sg
This research work is aimed to epitaxially integrate (Al) GaInP compounds on silicon (Si)
platform for visible-light (red, yellow, and green) LEDs. The integrated LED on Si not only …
platform for visible-light (red, yellow, and green) LEDs. The integrated LED on Si not only …