Germanium CMOS potential from material and process perspectives: Be more positive about germanium

A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

Electrical spin injection and transport in semiconductor nanowires: challenges, progress and perspectives

J Tang, KL Wang - Nanoscale, 2015 - pubs.rsc.org
Spintronic devices are of fundamental interest for their nonvolatility and great potential for
low-power electronics applications. The implementation of those devices usually favors …

Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts

L Wind, M Sistani, R Böckle, J Smoliner, L Vukŭsić… - Small, 2022 - Wiley Online Library
Si1− xGex is a key material in modern complementary metal‐oxide‐semiconductor and
bipolar devices. However, despite considerable efforts in metal‐silicide and‐germanide …

Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes

K Kasahara, Y Fujita, S Yamada, K Sawano… - Applied Physics …, 2014 - iopscience.iop.org
We show nonlocal spin transport in n-Ge-based lateral spin-valve devices with highly
ordered Co 2 FeSi/n+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle effect …

Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements

M Yamada, M Tsukahara, Y Fujita, T Naito… - Applied Physics …, 2017 - iopscience.iop.org
We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors

J Tang, CY Wang, LT Chang, Y Fan, T Nie, M Chan… - Nano …, 2013 - ACS Publications
In this Letter, we report the electrical spin injection and detection in Ge nanowire transistors
with single-crystalline ferromagnetic Mn5Ge3 as source/drain contacts formed by thermal …

Understanding and controlling band alignment at the metal/germanium interface for future electric devices

T Nishimura - Electronics, 2022 - mdpi.com
Germanium (Ge) is a promising semiconductor as an alternative channel material to
enhance performance in scaled silicon (Si) field-effect transistor (FET) devices. The gate …

Mobility enhancement technology for scaling of CMOS devices: overview and status

Y Song, H Zhou, Q Xu, J Luo, H Yin, J Yan… - Journal of electronic …, 2011 - Springer
The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS)
technology to the sub-21-nm technology node is facing great challenges. Innovative …

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

K Kasahara, Y Baba, K Yamane, Y Ando… - Journal of Applied …, 2012 - pubs.aip.org
Using high-quality Fe 3 Si/n+-Ge Schottky-tunnel-barrier contacts, we study spin
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …

Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface

T Nishimura, T Yajima, A Toriumi - Applied Physics Express, 2016 - iopscience.iop.org
The element metal/germanium (Ge) interface exhibits a strong Fermi level pinning (FLP),
which is usually characterized on the basis of Ge side semiconductor properties. In this …