Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …

Abstract 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …

We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation
of SiC may inevitably lead to defect creation, the idea is to form the interface without …

Effective removal of near-interface traps (NITs) in SiO 2/4 H–SiC (0001) structures through
phosphorus incorporation is demonstrated in this paper. Low-temperature capacitance …

We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …

Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with
thermal as-grown SiO 2 and NO-annealed gate oxides have been studied using fast IV …

Alkali (Rb and Cs) and alkaline earth (Ca, Sr, and Ba) elements have been investigated as
interface passivation materials for metal-oxide-semiconductor field-effect transistors …

Abstract We formed SiC/SiO 2 structures by various procedures that excluded an oxidation
process. We found that a SiC/SiO 2 interface with a low interface state density near the …

We report on the electrical properties of Al 2 O 3 films grown on 4H-SiC by successive
thermal oxidation of thin Al layers at low temperatures (200 C-300 C). MOS capacitors made …