Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN
Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1× 10 16 cm− 2 at
room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of …
room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of …