With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

We present a comparative study of optical properties of silicon nitride thin films deposited by
reactive radio-frequency (R-RF) sputtering, low pressure chemical vapor deposition …

Silicon nitride shows significant potential in the field of surface protection for electronic
devices owing to its excellent insulation performance and mechanical properties. In this …

In this work we produce and study the flexible organic–inorganic hybrid moisture barrier
layers for the protection of air sensitive organic opto-electronic devices. The inorganic …

High-quality amorphous silicon nitride (SiN x) thin films were fabricated by the controlled
growth of nanoparticles during SiH 4+ N 2 multi-hollow remote plasma chemical vapor …

In this work we produce and study silicon nitride (SiN x) thin films deposited by Hot Wire
Chemical Vapor Deposition (HW-CVD) to be used as encapsulation barriers for flexible …

We present a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics
made entirely by hot wire chemical vapor deposition (HWCVD) at substrate temperatures …

To prevent moisture and oxygen permeation into flexible organic electronic devices formed
on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is …

We examined the chemical, structural, mechanical and optical properties of amorphous
hydrogenated silicon nitride thin films deposited by hot-wire chemical vapour deposition …

In this paper, we propose an optical switch based on a metal-insulator-metal plasmonic
waveguide with Si3N4 core sandwiched between two gallium (Ga) metal layers. Combining …