A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Materials issues and devices of α-and β-Ga2O3
E Ahmadi, Y Oshima - Journal of Applied Physics, 2019 - pubs.aip.org
Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …
(depending on its crystal structure), which is much greater than those of conventional wide …
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
[HTML][HTML] Donors and deep acceptors in β-Ga2O3
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …