Effects of Zn doped MoO3 nanocomposite interlayer on electrical and surface chemical state properties of Ni/Cr/n-GaN Schottky junction
V Manjunath, CK Kunapalli, M Vani, RJ Madhuri… - Materials Science and …, 2024 - Elsevier
A nanocomposite insulating layer of Zn: MoO 3 was prepared for a Ni/Cr/Zn: MoO 3/n-GaN
MIS junction, wherein the structural and chemical states, and electrical properties were …
MIS junction, wherein the structural and chemical states, and electrical properties were …
Optimization of deposition conditions to tune optoelectronic properties of MoO3-x films prepared by RF-sputtering technique
J Kumari, P Agarwal - Vacuum, 2023 - Elsevier
Tunable optoelectronic properties of Molybdenum oxide (MoO 3-x) make it a suitable
applicant for its use as a catalyst and a hole transport layer. Oxygen vacancies play a vital …
applicant for its use as a catalyst and a hole transport layer. Oxygen vacancies play a vital …
On the current conduction mechanisms of WO3/n-Ge Schottky interfaces
GH Thomas, AA Kumar, VR Reddy… - Materials Today …, 2023 - Elsevier
Electrical properties of n-Ge contacts tailored with nanostructured WO 3 is analysed using
current–voltage (IV) and capacitive-voltage (CV) measurements. Au/WO 3/n-Ge …
current–voltage (IV) and capacitive-voltage (CV) measurements. Au/WO 3/n-Ge …
Electrical characterization of Ag/MoO3−x/p-Si Schottky diodes based on MoO3−x synthesized via sol–gel method: an investigation on frequency and voltage …
A Mutlu, C Tozlu - Journal of Materials Science: Materials in Electronics, 2024 - Springer
MoO3− x is a commonly used buffer layer in organic based optoelectronic devices to align
energy level between active semiconductor and metal layer. The purpose of this study is to …
energy level between active semiconductor and metal layer. The purpose of this study is to …
The effect of substrate temperature on the preparation of molybdenum oxide thin films by spray pyrolysis method used in diode
M Ataei, MRF Fadavieslam - Iranian Journal of Crystallography and …, 2023 - ijcm.ir
In this research, the diodes were made using a thin films of molybdenum oxide on the doped
P-type silicon substrate with the aim of studying the effect of the substrate temperature on the …
P-type silicon substrate with the aim of studying the effect of the substrate temperature on the …