Tin adatoms on a Si (111) substrate with a one-third monolayer coverage form a two-
dimensional triangular lattice with one unpaired electron per site. These electrons order into …

Adsorption of one-third monolayer of Sn on an atomically clean Si (111) substrate produces
a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute …

The physics of doped Mott insulators is at the heart of some of the most exotic physical
phenomena in materials research including insulator-metal transitions, colossal …

As a clean, eco-friendly and sustainable process, electrocatalysis has potential to replace
the energy-consuming and environment-polluting Haber–Bosch process for N2 fixation …

A plethora of fundamentally different electronic states can coexist in orbital-selective
systems, including Mott-localized, pseudogapped, Fermi, and non-Fermi-liquid phases …

Fabricating heterojunctions with precisely controlled interfacial structures is crucial for
exploring novel low-dimensional physics and for realizing high-performance devices …

Room temperature (RT) adsorption of tin (Sn) under ultra-high vacuum (UHV) conditions on
mechanically cleaved tungsten disulfide (WS 2) surfaces is reported here. In-situ low energy …

Adsorption of 1/3 monolayer of Sn on a heavily doped p-type Si (111) substrate results in the
formation of a hole-doped Mott insulator, with electronic properties that are remarkably …

This study utilizes spatially resolved low-temperature scanning tunneling microscopy and
spectroscopy to investigate cobalt oxide nanoislands on Au (111) single-crystal surfaces …

One‐third of monolayer of Sn adatoms on a Ge (111) substrate forms a 2D triangular lattice
with one unpaired electron per site. The system presents a metal–insulator transition when …