Silicon nitride and hydrogenated silicon nitride thin films: A review of fabrication methods and applications
Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx: H) thin films enjoy widespread
scientific interest across multiple application fields. Exceptional combination of optical …
scientific interest across multiple application fields. Exceptional combination of optical …
[图书][B] Ионно-плазменные процессы в тонкопленочной технологии
ЕВ Берлин, ЛА Сейдман - 2010 - elibrary.ru
Настоящая книга представляет собой подробное справочное руководство по основным
вакуумным плазмохимическим процессам в тонкопленочной технологии-реактивному …
вакуумным плазмохимическим процессам в тонкопленочной технологии-реактивному …
Deposition of silicon nitride thin films by RF magnetron sputtering: a material and growth process study
MA Signore, A Sytchkova, D Dimaio, A Cappello… - Optical Materials, 2012 - Elsevier
Silicon nitride (SiNx) thin films were deposited by RF magnetron sputtering at room
temperature in (Ar+ N2) atmosphere by tuning the reactive gas flux percentage in the …
temperature in (Ar+ N2) atmosphere by tuning the reactive gas flux percentage in the …
Atmospheric-pressure plasma-enhanced chemical vapor deposition of a-SiCN: H films: role of precursors on the film growth and properties
S Guruvenket, S Andrie, M Simon… - … Applied Materials & …, 2012 - ACS Publications
Atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using
Surfx AtomflowTM 250D APPJ was utilized to synthesize amorphous silicon carbonitride …
Surfx AtomflowTM 250D APPJ was utilized to synthesize amorphous silicon carbonitride …
Diffusion studies in magnetron sputter deposited silicon nitride films
J Kulczyk-Malecka, PJ Kelly, G West… - Surface and Coatings …, 2014 - Elsevier
In this work, silicon nitride coatings were deposited by magnetron sputtering onto float glass
substrates and post-deposition annealed at 650° C for 5 min. The structures and …
substrates and post-deposition annealed at 650° C for 5 min. The structures and …
Tuning silicon nitride refractive index through radio-frequency sputtering power
Fabrication of thin-film multilayer structures by sputtering typically requires a multi-cathode
deposition machine. This study proposes a simpler approach based on the radio-frequency …
deposition machine. This study proposes a simpler approach based on the radio-frequency …
Cavitation erosion resistance of NiTi thin films produced by Filtered Arc Deposition
In this study, NiTi thin films were obtained by using a Filtered Arc Deposition System (FADS).
X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive …
X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive …
Mechanical property characterization of sputtered and plasma enhanced chemical deposition (PECVD) silicon nitride films after rapid thermal annealing
In this paper, the mechanical and fracture properties of silicon nitride films subjected to rapid
thermal annealing (RTA) have been systemically tested. The residual stress, Young's …
thermal annealing (RTA) have been systemically tested. The residual stress, Young's …
[HTML][HTML] Impurity analysis of electroplated gold components with multi-layered structures by thermal desorption spectrometry toward application in gold Micro electro …
Au-based micro-electro-mechanical-system (Au-MEMS) capacitance accelerometers show
high sensitivity by suppressing the mechanical noise because of the high mass density of …
high sensitivity by suppressing the mechanical noise because of the high mass density of …
Atmospheric pressure plasma CVD of amorphous hydrogenated silicon carbonitride (a‐SiCN: H) films using triethylsilane and nitrogen
S Guruvenket, S Andrie, M Simon… - Plasma Processes …, 2011 - Wiley Online Library
Amorphous hydrogenated silicon carbonitride (a‐SiCN: H) thin films are synthesized by
atmospheric pressure plasma enhanced chemical vapor (AP‐PECVD) deposition using the …
atmospheric pressure plasma enhanced chemical vapor (AP‐PECVD) deposition using the …