Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are
regarded as the key device for the next generation of power electronics. However, wide …

Several important aspects related to the phenomena of ac gate-bias stress-induced
threshold-voltage degradation in SiC MOSFETs are presented. These include a detailed …

An improved SiC MOSFET model is proposed in this article, which predicts the dynamics
accurately in the wide operation range of the SiC mosfet. The temperature-sensitive effect …

This work presents an investigation of several important phenomena related to threshold-
voltage instability in SiC MOSFETs. Such instability can occur in previously unstressed as …

A high-performance novel 4H-SiC trench power MOSFET employing the junctionless
concept is proposed in this work. The presented design is modeled and investigated …

The robustness of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor
(MOSFET) under harsh environments is a crucial factor to ensure power conversion system …

Amidst the electrification of aviation, this paper discusses the reliability of silicon carbide
(SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). With the help of the …

Threshold voltage (V_TH) hysteresis affects the dynamic characteristics of silicon carbide
(SiC) MOSFETs, which in turn affects reliability of a device. In this paper, a dynamic …

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfet s) are
becoming increasingly prevalent in various power electronic applications. However, their …