GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

We review in this article the current theoretical understanding of collective and single
particle diffusion on surfaces and how it relates to the existing experimental data. We begin …

An analytical bond-order potential for GaAs is presented, that allows one to model a wide
range of properties of GaAs compound structures, as well as the pure phases of gallium and …

An analytic, bond-order potential (BOP) is proposed and parametrized for the gallium
arsenide system. The potential addresses primary (σ) and secondary (π) bonding and the …

A parametrization of the Abell–Tersoff potential for In, Ga, As, InAs, and GaAs is presented
by using both experimental data and results from density-functional calculations as input …

Scaling down material synthesis to crystalline structures only few atoms in size and precisely
positioned in device configurations remains highly challenging, but is crucial for new …

Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs
through the propagation of atomic steps, a process called step-flow growth. In some …

A novel mechanism leading to the onset of step bunching instabilities during chemical
vapour epitaxial growth on vicinal substrates is presented. It is based on the coupling …

GaN quantum dots (QDs) have enormous potential for applications in science and
technology, but their optimal use requires precise control of parameters such as density, size …

Ripple formation driven by Ehrlich–Schwoebel barrier is evidenced for normal incidence 30
eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern …