New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …

The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …

Using hybrid functional calculations we investigate the effects of carbon on the electrical and
optical properties of GaN. In contrast to the currently accepted view that C substituting for N …

The bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction
field-effect transistors is studied in drift diffusion simulations, distinguishing between …

Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

A systematic study of GaN-based heterostructure field-effect transistors with an insulating
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …