The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

1.2 Preliminaries—some surface properties of solids 2 1.2. 1 Clean and real surfaces 3 1.2.
2 Electron states in solids and at surfaces 5 1.2. 3 The work function of a solid 10 1.3 The …

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis
is placed on the examination of how these models agree with general physical principles …

Surface and interface physics has still remained an indispensible basis for many branches
of modern research, in particular for all kinds of nanoscience, as the properties of …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

Considerable research and development means have been focused in the past decade on
organic semiconductor thin films and devices with applications to full color displays, flexible …

Surfaces and Interfaces of Solid Materials emphasises both experimental and theoretical
aspects of surface and interface physics. Beside the techniques of preparing well-defined …

Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …