Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed …
Y Han, Y Wang, S Fu, J Ma, H Xu, B Li, Y Liu - Small, 2023 - Wiley Online Library
Abstract An excellent broad‐spectrum (220–380 nm) UV photodetector, covering the UVA‐
UVC wavelength range, with an ultrahigh detectivity of≈ 1015 cm Hz1/2 W− 1, is reported. It …
UVC wavelength range, with an ultrahigh detectivity of≈ 1015 cm Hz1/2 W− 1, is reported. It …
Emerging opportunities in lead-free and lead–tin perovskites for environmentally viable photodetector applications
E Jokar, L Cai, J Han, EJC Nacpil, I Jeon - Chemistry of Materials, 2023 - ACS Publications
In modern society, photodetectors (PDs) have permeated virtually all areas of human life,
from home appliances to space exploration. This versatility generates a high demand for …
from home appliances to space exploration. This versatility generates a high demand for …
Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed …
Y Han, Y Wang, D Xia, S Fu, C Gao, J Ma, H Xu… - Small …, 2023 - Wiley Online Library
This work reports a high‐detectivity solar‐blind deep ultraviolet photodetector with a fast
response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction …
response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction …
Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio
S Yan, T Jiao, Z Ding, X Zhou, X Ji… - Advanced Electronic …, 2023 - Wiley Online Library
Solar‐blind photodetectors have attracted extensive attention due to their advantages such
as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au …
as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au …
Quasi-vertical ε-Ga2O3 solar-blind photodetectors grown on p-Si substrates with Al2O3 buffer layer by metalorganic chemical vapor deposition
H Qian, X Zhang, Y Ma, L Zhang, T Chen, X Wei… - Vacuum, 2022 - Elsevier
oriented ε-Ga 2 O 3 thin films were heteroepitaxially grown on p-Si (111) substrates by
metalorganic chemical vapor deposition (MOCVD). The introduction of Al 2 O 3 buffer layer …
metalorganic chemical vapor deposition (MOCVD). The introduction of Al 2 O 3 buffer layer …
Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga 2 O 3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector
A novel p–i–n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD
(spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the …
(spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the …
Ultrasensitive pn junction UV-C photodetector based on p-Si/β-Ga2O3 nanowire arrays
MC Pedapudi, JC Dhar - Sensors and Actuators A: Physical, 2022 - Elsevier
Abstract Ultrasensitive UV-C photodetector (PD) based on β-Ga 2 O 3 nanowires (NWs)
were fabricated on p-type Si substrate using glancing angle deposition technique inside …
were fabricated on p-type Si substrate using glancing angle deposition technique inside …
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …
attention over the last decade, which poses great advantages to complex device integration …
Advancements in Ga2O3-Based Heterojunction Ultraviolet Photodetectors: Types, Fabrication Techniques, and Integrated Materials for Enhancing Photoelectric …
X Zhu, Y Wu, Z Pan, W Lu - Journal of Alloys and Compounds, 2024 - Elsevier
Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy
Beta-phase gallium oxide (β-Ga 2 O 3) research has gained accelerated pace nowadays.
However, the high acceptor activation energy obstructs the development of homojunction …
However, the high acceptor activation energy obstructs the development of homojunction …