ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
A review on resistive switching in high-k dielectrics: a nanoscale point of view using conductive atomic force microscope
M Lanza - Materials, 2014 - mdpi.com
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …
next generation information storage, leading to great performance and fabrication-friendly …
[图书][B] Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
With its comprehensive coverage, this reference introduces readers to the wide topic of
resistance switching, providing the knowledge, tools, and methods needed to understand …
resistance switching, providing the knowledge, tools, and methods needed to understand …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch… - Journal of Applied …, 2011 - pubs.aip.org
By combining electrical, physical, and transport/atomistic modeling results, this study
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
On the switching parameter variation of metal-oxide RRAM—Part I: Physical modeling and simulation methodology
The variation of switching parameters is one of the major challenges to both the scaling and
volume production of metal-oxide-based resistive random-access memories (RRAMs). In …
volume production of metal-oxide-based resistive random-access memories (RRAMs). In …
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently
improved greatly with regard to their memory performances. The formation and rupture of …
improved greatly with regard to their memory performances. The formation and rupture of …
Electronic properties of hafnium oxide: A contribution from defects and traps
VA Gritsenko, TV Perevalov, DR Islamov - Physics Reports, 2016 - Elsevier
In the present article, we give a review of modern data and latest achievements pertaining to
the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a …
the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a …
A Physical Model of the Temperature Dependence of the Current Through Stacks
L Vandelli, A Padovani, L Larcher… - … on Electron Devices, 2011 - ieeexplore.ieee.org
In this paper, we investigate the characteristics of the defects responsible for the leakage
current in the SiO 2 and SiO 2/HfO 2 gate dielectric stacks in a wide temperature range (6 K …
current in the SiO 2 and SiO 2/HfO 2 gate dielectric stacks in a wide temperature range (6 K …
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
A physics-based compact model of metal-oxide-based resistive-switching random access
memory (RRAM) cell under dc and ac operation modes is presented. In this model, the …
memory (RRAM) cell under dc and ac operation modes is presented. In this model, the …