Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

The existence of leakage current pathways leading to the appearance of impact ionization
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …

This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

An investigation into self-switching diodes based on highly doped GaN is conducted under
direct current (dc) bias conditions. Different device geometries are explored under various …

Impact ionization originated by the buffer leakage current, together with high electric fields (>
3 MV/cm) at the anode corner of the isolating trenches, has been identified as the failure …

One-dimensional three-periodic photonic-crystal (PC) structures based on dielectric
nonmagnetic materials (SiO 2, Al 2 O 3, TiO 2, ZrO 2) that form [(ab) N (cd) M] K supercells …

Рассмотрены одномерные трёхпериодические фотонно-кристаллические структуры
на основе диэлектрических немагнитных материалов (SiO2, Al2O3, TiO2, ZrO2) …

In this study, the performance of a doped-GaN-based planar Gunn diode (PGD) with a T-
shape channel is investigated through numerical simulations. The effects of the vertical …

Gunn oscillations are expected to appear in GaN at high electric fields due to its negative
differential mobility, but they have never been observed experimentally due to the large …

In this contribution we present a study of GaN Planar Gunn Diodes (PGDs) through a
combined deep learning-Monte Carlo (MC) approach. MC simulations will be used to …