BTI analysis tool (BAT) model framework—Generation of interface traps
In this chapter, the RD model is described to simulate the time kinetics of interface traps. The
model uses inversion layer (cold) hole induced dissociation of Hydrogen passivated …
model uses inversion layer (cold) hole induced dissociation of Hydrogen passivated …
BTI analysis tool (BAT) model framework—Generation of bulk traps
In this chapter, the RDD model is used to simulate the time kinetics of bulk gate insulator
traps. The model uses AHI induced dissociation of Hydrogen passivated bulk gate insulator …
traps. The model uses AHI induced dissociation of Hydrogen passivated bulk gate insulator …
BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs
In this chapter, the BAT framework presented in Chap. 4 through Chap. 6 is used to analyze
and model the measured NBTI time kinetics in planar bulk p-MOSFETs having Gate First …
and model the measured NBTI time kinetics in planar bulk p-MOSFETs having Gate First …
Device Architecture, Material and Process Dependencies of NBTI Parametric Drift
S Mahapatra, N Parihar - Recent Advances in PMOS Negative Bias …, 2022 - Springer
In this chapter, the p-MOSFET parametric drift during and after DC NBTI stress is discussed.
Data from devices having different architectures (bulk and FDSOI planar, FinFET, and GAA …
Data from devices having different architectures (bulk and FDSOI planar, FinFET, and GAA …
BAT framework modeling of gate first HKMG Si channel MOSFETs
In this chapter, the BAT framework presented in Chap. 4 through Chap. 6 is used to analyze
and model the measured NBTI time kinetics in Gate First HKMG Silicon channel bulk planar …
and model the measured NBTI time kinetics in Gate First HKMG Silicon channel bulk planar …
BAT framework modeling of RMG HKMG Si and SiGe channel FinFETs
In this chapter, the BAT framework presented in Chap. 4 through Chap. 6 is used to analyze
and model the measured NBTI time kinetics in Silicon and Silicon Germanium channel bulk …
and model the measured NBTI time kinetics in Silicon and Silicon Germanium channel bulk …
BAT framework modeling of dimension scaling in FinFETs and GAA-SNS FETs
In this chapter, the BAT framework presented in Chap. 4 through Chap. 6 is used to analyze
and model the impact of device dimension scaling on NBTI in Silicon and Silicon …
and model the impact of device dimension scaling on NBTI in Silicon and Silicon …
Physical Mechanism of NBTI Parametric Drift
In this chapter, experimental evidences are provided to link NBTI parametric drift to the
generation of interface and bulk gate insulator traps, and hole trapping in pre-existing bulk …
generation of interface and bulk gate insulator traps, and hole trapping in pre-existing bulk …
BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency
In this chapter, the BAT framework presented in Chap. 4 through Chap. 6 is used to analyze
and model the measured NBTI time kinetics during and after AC stress. Modeling is done on …
and model the measured NBTI time kinetics during and after AC stress. Modeling is done on …
BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs
In this chapter, the BAT framework presented in Chap. 4 through Chap. 6 is used to analyze
and model the measured NBTI time kinetics in differently processed silicon and silicon …
and model the measured NBTI time kinetics in differently processed silicon and silicon …