Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon
M Kanoun, R Benabderrahmane, C Duluard… - Applied physics …, 2007 - pubs.aip.org
This work focuses on electrical characterization of Ni Fe∕ Si O 2∕ Si tunnel diodes that can
be used for spin injection into silicon in future spintronic devices. Capacitance-voltage …
be used for spin injection into silicon in future spintronic devices. Capacitance-voltage …
Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon
M Kanoun, R Benabderrahmane, C Duluard… - Applied Physics …, 2007 - pubs.aip.org
This work focuses on electrical characterization of NiFe/SiO2/Si tunnel diodes that can be
used for spin injection into silicon in future spintronic devices. Capacitance-voltage …
used for spin injection into silicon in future spintronic devices. Capacitance-voltage …
Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon
M Kanoun, R Benabderrahmane… - Applied Physics …, 2007 - ui.adsabs.harvard.edu
This work focuses on electrical characterization of NiFe/SiO 2/Si tunnel diodes that can be
used for spin injection into silicon in future spintronic devices. Capacitance-voltage …
used for spin injection into silicon in future spintronic devices. Capacitance-voltage …