GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template
XX Fu, B Zhang, XN Kang, JJ Deng, C Xiong, T Dai… - Optics …, 2011 - opg.optica.org
In this paper, we propose and demonstrate a convenient and flexible approach for
preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip …
preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip …
Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns
J Park, JK Oh, KW Kwon, YH Kim, SS Jo… - IEEE Photonics …, 2008 - ieeexplore.ieee.org
A photonic crystal (PC) light-emitting diode (LED) was fabricated using an anodized
aluminum oxide (AAO) nano-pattern technique, which has potential applications to mass …
aluminum oxide (AAO) nano-pattern technique, which has potential applications to mass …
Porous light-emitting diodes with patterned sapphire substrates realized by high-voltage self-growth and soft UV nanoimprint processes
TY Sun, WN Zhao, XH Wu, SS Liu… - Journal of lightwave …, 2013 - ieeexplore.ieee.org
Nanostructured GaN-based light-emitting diode (LED), with its high performance on light
extraction efficiency, has attracted significant attention for the potential application in solid …
extraction efficiency, has attracted significant attention for the potential application in solid …
Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
T Wei, K Wu, D Lan, Q Yan, Y Chen, C Du… - Applied Physics …, 2012 - pubs.aip.org
We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO
2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light …
2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light …
Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography
SiN_x-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a
GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a …
GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a …
GaN-based light-emitting diodes directly grown on sapphire substrate with holographically generated two-dimensional photonic crystal patterns
As an approach to enhance light extraction from GaN-based light-emitting diodes (LEDs),
we inserted a submicron period photonic crystal (PC) pattern at the interface between GaN …
we inserted a submicron period photonic crystal (PC) pattern at the interface between GaN …
Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography
K Wu, TB Wei, D Lan, HY Zheng, JX Wang… - Chinese …, 2013 - iopscience.iop.org
Wafer-scale SiO 2 photonic crystal (PhC) patterns (SiO 2 air-hole PhC, SiO 2-pillar PhC) on
indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel …
indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel …
Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal
We report the development of a GaN-based green light-emitting diode (LED) with a selective
area photonic crystal (SPC) structure, which was formed outside the p-bonding electrode on …
area photonic crystal (SPC) structure, which was formed outside the p-bonding electrode on …
Monolithically integrated green-to-orange color InGaN-based nanocolumn photonic crystal LEDs with directional radiation beam profiles
A Yanagihara, K Kishino - Applied Physics Express, 2022 - iopscience.iop.org
In this study, the monolithic integration of LEDs with different emission colors (wavelengths
of 543, 573, and 597 nm) with the directional radiation profiles was demonstrated …
of 543, 573, and 597 nm) with the directional radiation profiles was demonstrated …
Improvement of GaN‐based LED with SiO2 photonic crystal on an ITO film by holographic lithography
HH Yen, HC Kuo, WY Yeh - physica status solidi c, 2008 - Wiley Online Library
GaN‐based light‐emitting diode (LED) with SiO2 photonic crystals (PCs) structure made by
holographic lithography on an indium‐tin‐oxide (ITO) film was fabricated. The PCs made on …
holographic lithography on an indium‐tin‐oxide (ITO) film was fabricated. The PCs made on …