Controlled formation of stacked si quantum dots in vertical SiGe nanowires
We demonstrate the ability to fabricate vertically stacked Si quantum dots (QDs) within SiGe
nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature …
nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature …
Lateral Ge diffusion during oxidation of Si/SiGe fins
This Letter reports on the unusual diffusion behavior of Ge during oxidation of a multilayer
Si/SiGe fin. It is observed that oxidation surprisingly results in the formation of vertically …
Si/SiGe fin. It is observed that oxidation surprisingly results in the formation of vertically …
The diffusion mechanism of Ge during oxidation of Si/SiGe nanofins
A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of
Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and …
Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and …
Controlled formation of GeSi nanostructures on periodic Si (001) sub-micro pillars
T Zhou, C Zeng, Q Ma, Y Ma, Y Fan, Z Jiang, J Xia… - Nanoscale, 2014 - pubs.rsc.org
Self-assembled GeSi nanostructures on periodic Si (001) sub-micro pillars (SMPs) are
systematically studied. Different GeSi nanostructures, including circularly arranged quantum …
systematically studied. Different GeSi nanostructures, including circularly arranged quantum …
Precise Ge quantum dot placement for quantum tunneling devices
KH Chen, CY Chien, PW Li - Nanotechnology, 2009 - iopscience.iop.org
This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO 2 or Si 3
N 4 matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The …
N 4 matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The …
Coordinated and simultaneous formation of paired Ge quantum dots by thermal oxidation of designer poly-SiGe spacer structures
HY Chen, KP Peng, T George, HC Lin… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
We report a novel self-organized approach for the controllable placement of paired Ge
quantum dots (QDs) along each sidewall edge of poly-Si ridges by simply thermally …
quantum dots (QDs) along each sidewall edge of poly-Si ridges by simply thermally …
Hexagonal SiGe quantum dots and nanorings on Si (110)
CH Lee, CW Liu, HT Chang, SW Lee - Journal of Applied Physics, 2010 - pubs.aip.org
The hexagonal shapes of Si 0.13 Ge 0.87 quantum dots (QDs) and rings on Si (110) reflect
the lattice symmetry of the top two Si layers on Si, which is different from that on Si (100). The …
the lattice symmetry of the top two Si layers on Si, which is different from that on Si (100). The …
Growth kinetics and related physical/electrical properties of Ge quantum dots formed by thermal oxidation of Si1− xGex-on-insulator
WT Lai, PW Li - Nanotechnology, 2007 - iopscience.iop.org
Abstract SiGe-on-insulator (SGOI) structures were thermally oxidized to form Ge quantum
dots (QDs) that are embedded in a SiO 2 matrix, to systematically investigate possible …
dots (QDs) that are embedded in a SiO 2 matrix, to systematically investigate possible …
The wonderful world of designer Ge quantum dots
IH Wang, PY Hong, KP Peng, HC Lin… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
Starting with our remarkable discovery of spherical germanium (Ge) quantum dot (QD)
formation, we have embarked on an exciting journey of further discovery, all the while …
formation, we have embarked on an exciting journey of further discovery, all the while …
Tailoring strain and morphology of core–shell SiGe nanowires by low-temperature ge condensation
Selective oxidation of the silicon element of silicon germanium (SiGe) alloys during thermal
oxidation is a very important and technologically relevant mechanism used to fabricate a …
oxidation is a very important and technologically relevant mechanism used to fabricate a …