The intrinsic properties of initially p-type doped graphene (grown by chemical vapor
deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the …

The pre-H2O treatment and Al2O3 film growth under a two-temperature-regime mode in an
oxygen-deficient atomic layer deposition (ALD) chamber can induce n-type doping of …

The tuning of charge carrier density of graphene is an essential factor to achieve the
integration of high-efficiency electronic and optoelectronic devices. We demonstrate the …

Doping is an essential process to engineer the conductivity and work-function of graphene
for higher performance optoelectronic devices, which includes substitutional atomic doping …

While chemical vapor deposition (CVD) promises a scalable method to produce large-area
graphene, CVD-grown graphene has heretofore exhibited inferior electronic properties in …

Scalable and low-cost doping of graphene could improve technologies in a wide range of
fields such as microelectronics, optoelectronics, and energy storage. While achieving strong …

We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown
graphene using wet chemical processing. An ammonium fluoride solution was found …

To realize graphene-based electronics, various types of graphene are required; thus,
modulation of its electrical properties is of great importance. Theoretic studies show that …

This paper presents an innovative approach to fabricating controllable n-type doping
graphene transistors with extended air stability by using self-encapsulated doping layers of …

We propose a polymer-free graphene transfer technique for chemical vapor deposition-
grown graphene to ensure the intrinsic electrical properties of graphene for reliable …