This work focuses on electrical characterization of Ni Fe∕ Si O 2∕ Si tunnel diodes that can
be used for spin injection into silicon in future spintronic devices. Capacitance-voltage …

We report electrical characterisation of NiFe/SiO2/Si and NiFe/Al2O3/Si tunnel diodes that
are of potential interest for spin injection into silicon. The effect of the nature of the insulator …

The realization of many future spintronic devices requires efficient spin injection into
semiconductor structures. Critical considerations include interfacial intermixing of the …

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM)
Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective …

We report on a modified magnetic tunnel transistor having a silicon tunnel emitter. The
device has the structure Si∕ Al 2 O 3∕ base∕ Si with a spin-valve metal base, a Schottky …

The tunnel spin polarization of Ni 80 Fe 20∕ SiO 2 interfaces has been investigated using a
magnetic tunnel transistor (MTT). The MTT with a Ni 80 Fe 20∕ SiO 2 emitter shows a …

The resistance of Co–Al 2 O 3–Si tunnel contacts for electrical spin injection from a
ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7 …

We studied the spin accumulation signals in phosphorus-doped n+-Si (8× 10 19 cm− 3) by
measuring the spin transport in three-terminal vertical devices with Fe (3 nm)/Mg (0 and 1 …

This work is focused on the study of magnetic and electrical properties of ferromagnet/
semiconductor heterostructures that can be used for spin injection into silicon. Three …

In a recent publication, we demonstrated electrical spin injection and detection in n-type
silicon at temperatures up to 500K using ferromagnetic metal/SiO2 tunnel barrier contacts in …