All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for
the aim of high integration and low energy consumption in modern information technology …

We describe a spin logic device with controllable magnetization switching of perpendicularly
magnetized ferromagnet/heavy metal structures on a ferroelectric (1-)[Pb (Mg 1/3 Nb 2/3) O …

Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

To realize high-speed nonvolatile magnetic memory with low energy consumption, electric
switching of perpendicular magnetization by spin–orbit torque in the heavy …

For real-world applications, it is desirable to realize field-free spin–orbit torque (SOT)
switching in thin films with high perpendicular magnetic anisotropy (PMA). In this paper, we …

Spin–orbit torque magnetization switching is an efficient method to control magnetization. In
perpendicularly magnetized films, two types of spin–orbit torque are induced by driving a …

Efficient current‐induced switching of perpendicular magnetization is an essential task in
spintronics for realizing high‐performance information processing and for storage device …

Manipulating spin polarization orientation is challenging but crucial for field-free spintronic
devices. Although such manipulation has been demonstrated in a limited number of …

Abstract Spin–orbit torque (SOT)-induced magnetization switching shows promise for
realizing ultrafast and reliable spintronics devices. Bipolar switching of the perpendicular …

Switching of magnetization via spin-orbit torque provides an efficient alternative for
nonvolatile memory and logic devices. However, to achieve deterministic switching of …