Large area n–i–p–n–i–p a-SiC: H heterostructures are used as sensing element in a double
colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible …

We report in this paper the recent advances we obtained in optimizing a color image sensor
based on the laser-scanned-photodiode (LSP) technique. A novel device structure based on …

A SPICE model of the three color a-SiC: H/a-Si: H p–i–n/p–i–n detector operation is
presented. The equivalent electric circuit able to describe the behavior of the multilayer …

A two terminal optically addressed image processing device based on two stacked
sensing/switching p–i–n a-SiC: H diodes is presented. The charge packets are injected …

A large area colour imager optically addressed is presented. The colour imager consists of a
thin wide band gap pin a-SiC: H filtering element deposited on the top of a thick large area a …

In recent works large area hydrogenated amorphous silicon p–i–n structures with low
conductivity doped layers were proposed as single element image sensors. The working …

Large area pin a-SiC: H heterostructures are used as LSP color sensors. For reading out the
color signals, three appropriated voltages have to be successively applied in order to …

A newly engineered ZnO: Al/ap–i–n SixC1− x: H/Al configuration for the laser scanner
photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The …

A two terminal image and color sensitive detector based on two stacked sensing/switching
pin a-SiC: H diodes is presented. The imaging is performed in a write-read simultaneous …

This work presents preliminary results in the study of a novel structure for a laser scanned
photodiode (LSP) type of image sensor. In order to increase the signal output, a stacked p–i …